Local characterization of stoichiometrically-tailored WO3-x thin films through XAS and EXAFS

WO3-x films at different stoichiometries and phase structures have been prepared in Italy through non-reactive RF-sputtering and subsequently annealing in air. The characterizations that have been performed show evident variations in electrical, optical, and dielectric properties for differently treated samples. For the chase of a better understanding, XAS and EXAFS measurements at L3 edge of W element (at 10207 eV) in fluorescence mode are proposed. Sample environment during measurements involves both room temperature and cryostat. Detailed structural and chemical information are expected and possibly contributing to the interpretation of physio-chemical states of O vacancies and W atoms in WO3-x. Furtherly, information on electronic structure and density of states may help to illustrate electron states and unveil the electron transport mechanism in WO3-x.