Transistor Effect in III-Nitride-NbN Heterostructure

Niobium Nitride (NbN) is metallic at room temperature. NbN / III-N heterostructures are of interest fornew devices applications such as the Metal Base Transistor (MBT, Patented by III-V Lab) [Delage]. A IIINitride/NbN/III-Nitride heterostructure was processed and a first transistor effect is demonstrated. Adescription of the device and electrical characterisazion results are presented.