Optical Constants of a single AlN layer on Si
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https://zenodo.org/record/12743499
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资源简介：
Spectroscopic ellipsometry was used to determine the thickness and dielectric function of a Aluminium Nitride (AlN) layer on a Si wafer. The layer was determined to be 170 nm thick. The layer was provided by AIXTRON and manufactured by means of MOVPE.
The data was created using a M2000DI spectroscopic ellipsometer from Woollam Co. Inc. Analysis was done using the CompleteEASE software. The model used is a multi-peak oscillator model for the AlN layer.
The data resembles common database values for the material AlN.
创建时间：
2024-07-17
