Intrinsic Temporal Behavior of Titanium Oxide Memristors for Neuromorphic Systems: Raw dataset

<strong>Methodology</strong> Experiments were conducted on in-house fabricated Pt/TiO₂/Au structure with thickness of 15/25/20<em>nm</em> respectively. The fabricated structures were characterized using a 16 x 16 probe card mounted on a Cascade Microtech Summit 12000 Prober controlled via a ARC ONE DC I-V control system. Stimulation was conducted over five repeating cycles to demonstrate the behaviour of the resistance over time. Potentiation and depression were triggered by pulses of opposite polarity. The bias could potentially be altered to achieve a desired starting resistance. A total of five repeating cycles were conducted. Each experiment was conducted on a pristine device with 4V programming pulse width of 10ms and inter-pulse of 100ms. A total of 100 pulses were applied per direction. Each identical programming pulse was followed by a 0.1V non-invasive reading pulse for a fixed duration. Attached csv file include resistive values for three devices along with their corresponding pulse train and time.