Data to accompany: Nickel-Oxide Hole Transport Layers Prevent Abrupt Breakdown and Permanent Shorting of Perovskite Solar Cells Caused by Pinhole Defects

Forward-bias and reverse-bias current density vs. voltage (JV) data for devices measured and presented in the manuscript of the referenced article.
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Figure 1 --- Reverse JV curves to derive breakdown statistics. "Before" and "after" JV scans on perovskite-free transport-layer diodes (TLDs) and perovskite solar cells (PSCs) with C60/BCP electron transport layers (ETL). Data further separated by hole-transport layer (HTL) materials.
Figure 2 --- Reverse JV curves to derive breakdown statistics for PSCs with C60/SnOx ETLs. Data further separated by HTL materials.