Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1a Raw Data
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https://www.osti.gov/servlets/purl/1764126/
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资源简介：
10 hours chronoamperometry (CA) testing under 1 sun illumination and constant bias at -0.6 V vs RHE, the corresponding Faradaic efficiency reveals a self-improving nature of GaN, inset: CA testing on bare Si for 5 hours under 1 sun illumination and -0.6 V vs RHE, this bare Si photocathode rapidly drops down to < 0.05 mA/cm2 within an hour. Both CA testing performed in 0.5 M H2SO4 (pH=0.4).
提供机构：
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Lawrence Livermore National Laboratory
(LLNL), Livermore, CA (United States)
创建时间：
2021-02-08
