Structure modifications in Silicon and ZnS under ultrashort laser radiation

The goal of the present experiments is to use the high-resolution XRD at BM01 to study the smallest modifications ever created by ultrashort pulsed IR laser processing of monocrystalline silicon and ZnS crystals. The dependence of the size, exact position, defects' form, and structural properties on specific laser irradiation parameters will be investigated. The laser processing influence on sample properties such as crystal orientation, doping type, doping level, dislocations, and strain will be investigated. Aside from understanding the physical nature of these modifications, the immediate impact of this investigation will be to establish the optimal laser processing conditions for achieving the phase transition in the material, thus enabling the creation in a controllable way of sub-wavelength (nanometer scale) modifications in semiconductor structures based on Si, ZnS, Cr:ZnS and in various heterostructures based on Si and II-VI compounds.