Strain mapping of structural defects in a functional Si/SiGe QuBus

We will employ Scanning X-Ray Diffraction Microscopy to map the spatial strain distribution in the 8 nm Si/Si0.7Ge0.3 quantum well (QW) layer of a a functional Quantum Bus for coherent electron shuttling in a position where an electrostatic blockade of electron transport was observed. SXMD will determine weither the electric barrier is induced by a structural defect in the semiconductor layers, defective gate electrodes or if it is not related to structural changes, i.e. cause by a point defect.