1-Imino Nitroxide Pyrene for High Performance Organic Field-Effect Transistors with Low Operating Voltage
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https://figshare.com/articles/dataset/1_Imino_Nitroxide_Pyrene_for_High_Performance_Organic_Field_Effect_Transistors_with_Low_Operating_Voltage/3054409
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资源简介：
Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about −0.6 V) and inverse subthreshold slope (about 540 mV decade-1).
创建时间：
2006-10-11
