X-ray diffraction characterisation of strain engineering of single crystal silicon membranes by ion implantation

In this experiment, we aim to measure the strain at the micro-scale in novel silicon micro-/nano-structures for (opto-)electronic applications. We propose to use X-ray Laue micro-diffraction combined with energy resolution, using an additional Silicon Drift Detector and/or the “rainbow filter” technique developed on BM32, to measure simultaneously the distribution of the lattice tilts as well as all the components of the full strain tensor, to validate the very high strains detected with indirect techniques.