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Two-Dimensional CsAg5Te3–xSx Semiconductors: Multi-anion Chalcogenides with Dynamic Disorder and Ultralow Thermal Conductivity

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Figshare2018-10-08 更新2026-04-29 收录
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https://figshare.com/articles/dataset/Two-Dimensional_CsAg_sub_5_sub_Te_sub_3_i_x_i_sub_S_sub_i_x_i_sub_Semiconductors_Multi-anion_Chalcogenides_with_Dynamic_Disorder_and_Ultralow_Thermal_Conductivity/7180358
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Metal chalcogenides underpin a wide variety of energy-related applications and are ideal systems for probing lattice dynamics and fundamental transport phenomena. Here we describe the synthesis and transport properties of CsAg5TeS2 and its solid solution CsAg5Te3–xSx (x = 1–2), new semiconductors with tunable band gaps ranging from 0.17 to 0.30 eV. CsAg5TeS2 has a fully ordered two-dimensional structure that includes a group of Ag atoms in a heteroleptic tetrahedral coordination geometry (AgTe2S2). Single-crystal X-ray diffraction indicates that the compounds crystallize in the tetragonal space group P4/mmm, while pair distribution function (PDF) analysis reveals off-centering at the heteroleptic Ag sites, signifying the lower-symmetry I4/mcm space group. The underlying disorder acts as a phonon-blocking mechanism that helps facilitate an ultralow lattice thermal conductivity below 0.40 W·m–1·K–1 at ∼300 K , highlighting the importance of local disorder in thermal transport. Density functional theory provides additional insight into the electronic and thermal properties of the materials, which are good candidates for p-type thermoelectrics.
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2018-10-08
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