Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation

Name: Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation
Creator: Institute of High Pressure Physics
Published: 2026-05-13T13:34:19+08:00

RepOD Repository for Open Data2026-05-13 更新2026-07-23 收录

光致发光表征

离子注入GaN材料

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/MBEOQH 数据链接链接失效反馈

官方服务：

资源简介：

Boćkowski, Michał, 2026, "Ultra-High-Pressure Annealing Data for Si/Mg/Mg+N-ion-implanted GaN for photoluminescence characterisation", https://doi.org/10.18150/MBEOQH, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2026-05-13