Defect selective photoetching of GaN: Progress, applications and prospects

Name: Defect selective photoetching of GaN: Progress, applications and prospects
Creator: Institute of High Pressure Physics
Published: 2024-05-07T15:26:19+08:00

RepOD Repository for Open Data2024-05-07 更新2026-07-23 收录

氮化镓缺陷刻蚀

半导体缺陷工程

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/WF1FFM 数据链接链接失效反馈

官方服务：

资源简介：

Weyher, Jan, 2024, "Defect selective photoetching of GaN: Progress, applications and prospects", https://doi.org/10.18150/WF1FFM, RepOD, V1

提供机构：

Institute of High Pressure Physics

创建时间：

2024-05-07

Defect selective photoetching of GaN: Progress, applications and prospects

资源简介：

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