ULTRARAM™: towards the development of a III-V semiconductor, non-volatile, random-access memory
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https://research.lancaster-university.uk/en/datasets/35dea57a-2338-4ece-abe2-c365f2a29c78
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资源简介：
Dataset of electrical measurements for ULTRARAM memory devices on GaAs substrate. Includes, S-D sweeps, retention and endurance.Description
提供机构：
Lancaster University
创建时间：
2021-02-15
