Structural analysis of the crystallization of ferroelectric BTO films prepared on Pt/Si from aqueous solution for selective deposition appl

Pt/Si is a substrate of interest for the selective deposition of oxides from aqueous solution due to it's compatibility with thiol-based SAMs for patterning. BTO
is a good example oxide because its deposition using aqueous CSD is well studied. Previous measurements performed at ESRF have indicated that the Pt/Si
substrate may stabilise unwanted oxycarbonate phases during the annealing of BTO. To optimise the deposition of BTO on Pt/Si, we will study the annealing
process in BTO films prepared by aqueous CSD, as well as the influence of the annealing process on the ferroelectric properties of the films. We will perform in
situ X-ray diffraction measurements during the pyrolysis and annealing process to investigate the nucleation, growth, and decomposition of crystal phases in the
film. Additionally, we will perform diffraction measurements on pre-prepared samples under an applied electric field to correlate the phase composition of the film
to the ferroelectric properties.