A Rectifier Bridge Circuit Based on Metal-semiconductor-metal Fin Tunneling Diode for High-frequency Application

Tunneling diodes hold significant promise for future rectification in the terahertz (THz) and visible light spectra, thanks to their femtosecond-scale transit-time tunneling capabilities. In this work, TiN/ZnO/Pt fin tunneling diodes (FTDs) with tunneling distances of 10 and 5 nm are fabricated, which demonstrate remarkable characteristics, including ultrahigh asymmetry (1.6×10 4 for 10 nm device and 1.6×103 for 5 nm device), high responsivity (25.3 V-1 for 10 nm device and 28.3 V-1 for 5 nm device) at zero bias, surpassing the thermal voltage limit of conventional Schottky diodes, and low turn-on voltage (Von) of approximately 100 mV for both devices, making them ideal for power conversion applications. Using technology computer-aided design (TCAD) simulations, the observed asymmetry in electronic transport is attributed to the transition between Fowler-Nordheim tunneling (FNT) and trap-assisted tunneling (TAT) under different biasing conditions, as illustrated by the corresponding energy band profiles. Furthermore, by integrating the FTDs, a rectifier bridge circuit is designed and exhibits full-wave rectification behavior, validated through SPICE simulations for THz-band operations. This advancement offers a highly efficient solution for THz-band energy conversion and effective detection applications.