Simulated Resistive Drift of Memristive Devices
收藏DataCite Commons2024-12-14 更新2025-04-16 收录
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A dataset of simulated resistive drift series for an illustrative stochastic memristor.Dataset DescriptionThe memristor has an equilibrium resistance of approximately 500kΩ.5000 series are generated with starting resistances sampled uniformly from the range [100Ω, 750kΩ].Each series consists of 1001 datapoints, with the first (zeroth) point corresponding to the initial resistance, and subsequent points sampled at subsequent timesteps.Dataset CreationThe simulations were conducted using the event-based memristor model in [1], with parameters as follows, as specified in [2]:N = 1.8 × 106nthresh = 0gparallel = 1 × 10-6gstep = 1 × 10-8 Va = 0.256Voff = 0.2533References[1] Waleed El-Geresy, Christos Papavassiliou, Deniz Gündüz (2024), Event-Based Simulation of Stochastic Memristive Devices for Neuromorphic Computing, arXiv:2407.04718 [cs.ET][2] Waleed El-Geresy, Christos Papavassiliou, Deniz Gündüz (2024), Delay Conditioned Generative Modelling of Resistive Drift in Memristors, arXiv:2408.01539 [cs.ET]
提供机构：
IEEE DataPort
创建时间：
2024-12-14
