Heterostructures consisting of semiconductors with controlled morphology and interfaces find applications in many fields. A range of axial, radial, and diameter-modulated nanostructures have been synt
The closed form model to calculate the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. The proposed model is developed from the solution of Schrodinger’s equ
The data set comprises the data from the figures in the associated publication. Data for each of the figures are clearly labelled and fulfil EPSRC requirements. Full details of how the dat
The band alignment and the chemical bonding at the β-Ga2O3/AlN and β-Ga2O3/GaN interfaces are studied through hybrid functional calculations. We construct realistic slab models with III-O (III=Al, Ga)
This proposal aims to investigate Fe3O4/ZnO and their suitability as spintronic devices. Specifically we aim to investigate the influence of the ZnO termination state on the...
