Dataset for Back-end-of-line a-SiOxCy:H dielectrics for resistive memory
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下载链接：
https://eprints.soton.ac.uk/id/eprint/423262
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资源简介：
Dataset of figures in the paper Fan, J., Kapur, O., Huang, R., De Groot, C., & Jiang, L. (2018). Back-end-of-line a-SiOxCy:H dielectrics for resistive memory. AIP Advances. This dataset including XPS on a-SiOxCy:H films and current-voltage measurements tests on W/a-SiOxCy:H/Cu resistive memories.
提供机构：
University of Southampton
创建时间：
2018-09-21
