Data sets for figures 6,7,9,10,11 of the "Systematic method for studying asymmetric single-electron transistor" article

Every data set (FIG6, FIG7, FIG9, FIG10, FIG11) contains transport characteristics of some single-electron transistor configuration parameters. The figure (a) in each set is a differential conductance diagram di/dv_T vs v_T, v_G. (b) -- some curves (slices) of differential conductance diagram for the selected v_Gs. (c) -- IV_G-curves for some selected v_Ts. (d) -- IV_T-curves in the single diamond, (e) -- average number of excess electrons on the island vs v_T, v_G, (f) -- standard deviation of the number of excess electrons on the island \sqrt{D(n)} vs v_T, v_G.