Data about surface passivation of c-Ge by Al2O3 films
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https://dataverse.csuc.cat/citation?persistentId=doi:10.34810/data707
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资源简介：
Data regarding the measurement of effective surface recombination velocity (Seff) and fixed charge (Qf) as a function of aSiCx thickness. Data of Capacitance-Voltage (C-V) curves. Data about EELS measurement with Ge, O and Si signals with and without an interface layer of 1 nm a-SiCx.
提供机构：
CORA.Repositori de Dades de Recerca
创建时间：
2023-05-03
