Comparison of precursor sticking coefficients in ALD Al₂O₃ on high-aspect-ratio structures
收藏DataCite Commons2025-09-04 更新2026-05-04 收录
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https://orkg.org/comparison/R1469158
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资源简介：
This comparison brings together reported values of the sticking coefficients for trimethylaluminum (TMA, cTMA) and water (cH₂O) during the atomic layer deposition (ALD) of aluminum oxide (Al₂O₃). The data summarize measurements across different lateral high-aspect-ratio (LHAR) test structures, process temperatures, film thicknesses (cycles), and reactor types. By comparing these conditions, the table highlights how precursor–surface interactions vary depending on geometry, temperature, and experimental setup.
提供机构：
Open Research Knowledge Graph
创建时间：
2025-09-04
