Monitoring Ionic Diffusion in C60/CoB with Temperature and Voltage

In our previous run we successfully measured boron diffusion in C60/CoB/C60 trilayers. The structural and magnetic PNR signal was radically different after annealing at 300 ºC, with Refl1D fits showing boron diffusion both in the metal and into the molecular layer. We also completed a time-resolved PNR measurement monitoring changes at 300 ºC over 10 hours in a single Q window (up to 0.075 Å-1). Here, we will continue this research by studying ionic diffusion at higher temperature up to 350 ºC. We will also do time-resolved measurements up to 0.075 Å-1 at 260 ºCand 280 ºC to better monitor the ionic diffusion during 1 to 12 h. Finally, we will explore the effects of an electrical bias and the potential application of ionic diffusion in devices. We will attempt the electrical diffusion at 200 ºC in back-gated C60/CoB/C60 trilayers on a doped p-Silicon/SiO2substrate.