Theoretical study of Si⁺(²<i>P_J</i>)–RG complexes and transport of Si⁺(²<i>P_J</i>) in RG (RG = He–Ar)

We calculate accurate interatomic potentials for the interaction of a singly charged silicon cation with a rare gas atom of helium, neon or argon. We employ the RCCSD(T) method, and basis sets of quadruple-ζ and quintuple-ζ quality; each point is counterpoise-corrected and extrapolated to the basis set limit. We consider the lowest electronic state of the silicon atomic cation, Si⁺(²<i>P</i>), and calculate the interatomic potentials for the terms that arise from this: ²Π and ²Σ⁺. We additionally calculate the interatomic potentials for the respective spin-orbit levels, and examine the effect on the spectroscopic parameters; we also derive effective ionic radii for C⁺ and Si⁺. Finally, we employ each set of potentials to calculate transport coefficients, and compare these to available data for Si⁺ in He.