Data for: Detrimental copper-selenide bulk precipitation in the CuIn1-xGaxSe2 thin-film solar cells. A possible reason for the limited performance at large x?

Figures 1 to 7 are surface images of Cu(In,Ga)Se2 of different Ga content ( x=[Ga]/([Ga]+[In])=30%, 60% and 100%) before and after annealing at 350°C under vacuumfor 30 days.

The Raman analysis was performed at the surface of two Cu(In,Ga)Se2 samples with x=30% and 60% before and after annealing at 350°C under vacuum for 30 days.

The XRD analysis was performed on Cu(In,Ga)Se2 layers of 1) x=30%, 2) x=60% before after annealing at 350°C under vacuum for 30 days and 3) on a CuGaSe2 layer (x=100%)

The EDS cartography was performed on a CuGaSe2 layer after annealling aunder vacuum for 24h at 350°C

All the CIGSe films were grown on soda-lime glass/Mo substrate by physical vapor deposition using the Cu-RO process

图1至图7展示了不同镓含量（x=[Ga]/([Ga]+[In])=30%，60%及100%）的Cu(In,Ga)Se2材料在350°C真空退火30天前后的表面图像。拉曼光谱分析于两种镓含量为30%和60%的Cu(In,Ga)Se2样品在350°C真空退火30天前后的表面进行。X射线衍射分析针对以下Cu(In,Ga)Se2层进行：1) x=30%，2) x=60%的样品在350°C真空退火30天前后的情况，以及3) CuGaSe2层（x=100%）。能量色散X射线光谱制图在经过350°C真空退火24小时后的CuGaSe2层上进行。所有CIGSe薄膜均通过物理气相沉积法，利用Cu-RO工艺，在 soda-lime glass/Mo衬底上生长。