Effect of temperature on the optoelectrical properties of monolayer Mo(SXSe1–X)2 alloys

Files include the data presented in the manuscript entitled: "Effect of Temperature on the Optoelectrical Properties of Photodetectors Based on Mo(SXSe1–X)2 Alloys" by Król et al. (https://doi.org/10.1021/acsaelm.5c01320).Fig. 1 presents Raman spectra of monolayer Mo(SXSe1–X)2 alloysFig. 2 presents current-voltage characteristics of monolayer Mo(SXSe1–X)2 alloys in the dark as function of Temperature.Fig. 3 presents comparison of the influence of temperature (T), content of sulfur (S) in monolayer Mo(SXSe1−X)2 alloy and illumination (wavelength λ = 460, 519, 630 nm) on the photocurrent (IPHOTO), responsivity (R) and specific detectivity (D*) at a constant supply voltage (VS = 2 V) and optical power (POPT = 6 mW). The parameters used for the calculation were dark current (IDARK), wavelength, optical power (POPT = 6 mW) and elementary charge (e).Fig. 4 presents the influence of temperature (T), content of sulfur (S) in monolayer Mo(SXSe1−X)2 alloy and illumination (wavelength λ = 460, 519, 630 nm) on (a) the rise time (tRISE) and (b) fall time (tFALL) at a constant supply voltage (VS = 2 V) and optical power (POPT = 6 mW). The current-time characteristics were used to calculate tRISE and tFALL.