Potential profile, design parameters and thermal properties of asymmetric double-barrier heterostructures based on AlGaAs simulated with NEGF+H

This is a repository for assymmetric double barrier heterostructures that were simulated using the NEGF coupled with the heat equation described in BESCOND:Phys. Rev. Applied:2020.

Relation between the csv columns and variables:

Column
Variable
Definition

1
Lb1 [nm] 
First barrier length

2
LQW [nm]  
Quantum well length

3
Lb2 [nm] 
Second barrier length

4
γ
Fraction on Al in AlGaAs alloy

5
V [V]  
Bias between emitter and collector

6
CP [W/m²] 
Cooling power

7
Te [K] 
Electron temperature in the Quantum well

8
W1 [eV] 
First activation energy

9
W2 [eV] 
Second activation energy

10-1525
PP [eV]
Potential profile

These data was used to feed the machine learning workflow shared in https://gitlab.citius.usc.es/modev/coolML.

This work was supported by the Spanish MICINN/AEI, Xunta de Galicia, and FEDER Funds under Grant RYC-2017-23312, Grant PID2019-104834GB-I00, Grant PID2022-141623NB-I00, Grant PID2022-142709OB-C21/PID2022-142709OA-C22, Grant ED431F 2020/008, Grant ED431C 2022/16 and GELATO ANR project (ANR-21-CE50-0017).