SEB Step Current Characteristic of GaN HEMTs
收藏DataCite Commons2025-12-01 更新2026-05-05 收录
下载链接：
https://www.scidb.cn/detail?dataSetId=9e267cd15425405bad33094210b82780
下载链接
链接失效反馈官方服务：
资源简介：
Single-event burnout (SEB) experiments conducted on enhancement-mode GaN HEMTs, together with current measurements using a Keysight 34461A digital multimeter, revealed a new “step current” SEB characteristic, which provides a basis for studying the characteristic behavior of SEB phenomena.
提供机构：
Science Data Bank
创建时间：
2025-12-01
