Data underlying the publication: Third-order nonlinear Hall effect in Altermagnets RuO₂

This dataset supports the study of the third-order nonlinear Hall effect in the altermagnetic RuO₂. High-quality RuO₂ thin films were epitaxially grown on TiO₂ substrates. Nonlinear transport measurements were performed using a low-frequency lock-in technique (166 Hz) with an AC current. The data include first and third harmonic voltage–current traces when the current is applied along different crystal orientations , and the angle dependent third-harmonic voltage-current curves in RuO₂(001). This dataset provides reproducible evidence of the symmetry-dependent nonlinear Hall response characteristic of altermagnetic RuO₂.本数据集用于支持交替磁（altermagnetic）二氧化钌（RuO₂）中三阶非线性霍尔效应的相关研究。研究人员在二氧化钛（TiO₂）衬底上外延生长得到高质量的二氧化钌薄膜。实验采用频率为166 Hz的低频锁相技术（lock-in technique）配合交流电流开展非线性输运测量。数据集包含电流沿不同晶体取向施加时的一次谐波与三次谐波的电压-电流轨迹，以及(001)晶面二氧化钌中角度依赖的三次谐波电压-电流曲线。本数据集为交替磁二氧化钌中依赖于对称性的非线性霍尔响应特征提供了可复现的实验证据。