Research data supporting "MOVPE studies of zincblende GaN on 3C-SiC/Si (001)"

The MOVPE growth of two different sample series has been studied. In Sample Series A the epilayer growth temperature was varied at a constant V/III-ratio of 76 and a reactor pressure of 300 Torr. In Sample Series B the V-to-III ratio during the epilayer growth was varied at a constant temperature and a pressure of 300 Torr. For each sample series, a separate Text Document (.txt file) with the following information has been deposited: - AFM data: RMS roughness - AFM data: Feature size parallel and perpendicular to the miscut direction - XRD phase analysis - XRD w-Rocking curves FWHM A detailed description on how these data were collected is given in the associated research article.