Correlative X-ray Beam Induced Current and Scanning X-ray Diffraction Microscopy on Semiconductor Heterostructures
收藏ESRF Portal2028-01-01 更新2026-04-23 收录
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https://doi.esrf.fr/10.15151/ESRF-ES-2150909751
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资源简介：
We employ X-ray Beam Induced Current and Scanning X-ray Diffraction Microscopy with a nanofocussed beam to correlate structural and electrical properties on SiGe/Si and GaN/Si heterostructures. We test out the new modular XBIC setup consisting of a dedicated sample holder, a keithley 6487 picoammeter and a Voltage-to-frequency-converter and different types of electrical contacting. Moreover, we attempt to establish the sensitivity limit for mapping of doping concentrations and observe the effect of dopants on the lattice parameters.
提供机构：
ESRF, 71 avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France; ESRF, 71 avenue des Martyrs CS 40220, 38043, Grenoble, FR
创建时间：
2028-01-01
