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DataCite Commons2026-03-11 更新2026-05-03 收录
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https://ieee-dataport.org/documents/dataset-15
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"The radiation hardness of optocouplers is critical for the reliability of electronic systems in aerospace and nuclear environments. This study investigates the displacement damage effects induced by broad-spectrum neutron irradiation on commercial optocouplers, utilizing the Atmospheric Neutron Spectrometer (ANIS) at the China Spallation Neutron Source (CSNS). Devices were subjected to neutron fluences ranging from 108\u81f36.66\u00d71012 n\/cm2. Experimental results demonstrate a significant degradation in the Current Transfer Ratio (CTR), with a functional failure threshold identified at approximately 1.00\u00d71012 n\/cm2.Unlike previous studies that primarily focused on macroscopic parameter degradation, this work provides an in-depth analysis of the underlying physical mechanisms. By fitting the I-V characteristics of the Light Emitting Diode (LED) input using the Shockley diode model, we observed that the ideality factor increases to values greater than 2 (up to 2.31) under high fluence conditions. This indicates a transition in the dominant transport mechanism to tunneling-assisted recombination induced by deep-level defects. Furthermore, quantitative analysis reveals that while both the LED and the phototransistor contribute to CTR degradation, the reduction in minority carrier lifetime within the phototransistor is the decisive factor leading to device failure. Crucially, our investigation into bias voltage effects demonstrates that increasing the collector-emitter voltage provides only a marginal compensation effect in low-to-medium fluence regions and fails to suppress functional failure under high-fluence conditions. This study systematically analyzes the degradation trends of optocoupler performance versus neutron fluence and elucidates the physical mechanisms linking microscopic defect evolution to macroscopic functional failure. These findings provide essential experimental evidence and theoretical support for the radiation hardening design and lifetime prediction of isolated electronic systems intended for extreme radiation environments."
提供机构:
IEEE DataPort
创建时间:
2026-03-11
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