Dielectric data of vapor deposited Celecoxib thin films on substrates with varying surface roughness

The substrate roughness is a very important parameter that can influence the properties of supported thin films. Vapor-deposited glass (celecoxib, CXB) both in its bulk and in confined states on Silicon wafers with varying roughness values are tested. Here we use the broadband dielectric spectroscopy to provide the experimental evidence on the influence of surface roughness on the α-relaxation dynamics and the isothermal crystallization of this vapor-deposited glass. The data consists of 1.   Broadband dielectric spectroscopy raw data showing the relaxation time as a function of roughness and film thickness 2.   Broadband dielectric spectroscopy raw data of crystallization studiesThe frequency, temperature, real and complex dielectric .permittivity values of celecoxib thin films of varying thickness on silicon substrates with various roughness values are given in readme.txt file format.