Data for: Extreme Magnetoresistance at High-Mobility Oxide Heterointerfaces with Dynamic Defect Tunability

Data behind the main figures in article entitled 'Extreme Magnetoresistance at High-Mobility Oxide Heterointerfaces with Dynamic Defect Tunability' by D. V. Christensen, T. S. Steegemans, T. D. Pomar, Y. Z. Chen, A. Smith, V. N. Strocov, B. Kalisky, and N. Pryds published in Nature Communications. The data is separated into the individual main figures of the article in a self-explanable manner.Abstract:Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 103-108% in magnetic fields up to 60 T. XMR is often intimately linked to a gapless band structure with steep bands and charge compensation. Here, we show that a linear XMR of 80,000% at 15 T and 2 K emerges at the high-mobility interface between the large band-gap oxides γ-Al2O3 and SrTiO3. Despite the chemically and electronically very dissimilar environment, the temperature/field phase diagrams of γ-Al2O3/SrTiO3 bear a striking resemblance to XMR semimetals. By comparing magnetotransport, microscopic current imaging, and momentum-resolved band structures, we conclude that the XMR in γ-Al2O3/SrTiO3 is not strongly linked to the band structure, but arises from weak disorder enforcing a squeezed guiding center motion of electrons. We also present a dynamic XMR self-enhancement through an autonomous redistribution of quasi-mobile oxygen vacancies. Our findings shed new light on XMR and introduce tunability using dynamic defect engineering.

《高迁移率氧化物异质界面中的极端磁阻：动态缺陷可调性》一文中，作者D. V. Christensen、T. S. Steegemans、T. D. Pomar、Y. Z. Chen、A. Smith、V. N. Strocov、B. Kalisky和N. Pryds在《自然通讯》上发表的论文主要数据。该数据按照文章中的各个主要图形以自解释的方式进行划分。摘要：磁场引起的材料电阻变化揭示了控制其电子和磁性行为的基本性质。已经实现了各种磁阻类别，包括巨磁阻、超巨磁阻和异常磁阻，每种都具有独特的物理起源。近年来，在拓扑和非拓扑材料中观察到极端磁阻（XMR），其非饱和磁阻可达103-108%，在高达60 T的磁场下。XMR通常与无隙能带结构、陡峭的能带和电荷补偿密切相关。在本研究中，我们展示了在γ-Al2O3和SrTiO3的大能隙氧化物之间的高迁移率界面处，在15 T和2 K的温度下出现了80,000%的线性XMR。尽管在化学和电子环境上极为不同，但γ-Al2O3/SrTiO3的温度/场相图与XMR半金属的相图极为相似。通过比较磁输运、微观电流成像和动量分辨能带结构，我们得出结论，γ-Al2O3/SrTiO3中的XMR并不强烈依赖于能带结构，而是起源于弱无序，这强制电子进行压缩导引中心运动。我们还提出了一种动态XMR自我增强，这是通过准移动氧空位的自主重新分布实现的。我们的发现为XMR提供了新的见解，并引入了通过动态缺陷工程进行调谐的可能性。