PAMBE growth of GaN nanowires on metallic ZrN buffers - a critical impact of ZrN layer thickness on the growth temperature

Name: PAMBE growth of GaN nanowires on metallic ZrN buffers - a critical impact of ZrN layer thickness on the growth temperature
Creator: Institute of Physics, Polish Academy of Sciences
Published: 2025-04-09T12:21:05+08:00

RepOD Repository for Open Data2025-04-09 更新2026-07-23 收录

GaN纳米线生长

分子束外延工艺

数据链接：

https://repod.icm.edu.pl/dataset.xhtml?persistentId=doi:10.18150/HYOSCB 数据链接链接失效反馈

官方服务：

资源简介：

Sobańska, Marta, 2025, "PAMBE growth of GaN nanowires on metallic ZrN buffers - a critical impact of ZrN layer thickness on the growth temperature", https://doi.org/10.18150/HYOSCB, RepOD, V2

提供机构：

Institute of Physics, Polish Academy of Sciences

创建时间：

2025-04-09