Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 2b Raw Data
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https://www.osti.gov/servlets/purl/1764154/
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资源简介：
Photoconductive atomic force microscopy (PC-AFM) measurements were conducted on Si/GaN samples. PeakForce TUNA mode was used to acquire the morphology and current simultaneously. A PtIr conductive probe with spring constant of 2.8 Nm-1 was used for the scanning. A white light source was used to illuminate the surface during the acquisition. Line scan extracting the topography and photocurrent from a as-received Si/GaN sample. The topography mapping is 2 × 2 µm2. The sample bias was 0.4V and this photoconductive AFM measurement was performed under white light front illumination with an angle.
提供机构：
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States); Lawrence Livermore National Laboratory
(LLNL), Livermore, CA (United States)
创建时间：
2021-02-05
