Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress (raw data from journal article)

This upload contains raw data from the manuscript "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress". The manuscript was published in the Journal of Circuits, Systems and Computers. 2022; DOI: https://doi.org/10.1142/S0218126622400035

The upload consists of a .pdf file of the manuscript and .opj files with raw data related to the figures in the manuscript. 

This work was partly supported by the European Union’s Horizon 2020 research and innovation programme (Grant No. 857558) and the Ministry of Education, Science and Technology Development of the Republic of Serbia (Project No. 451-03-9/2021-14/20010).