Dataset: Thermionic rather than trap-assisted off-state conduction in BEOL a-IGZO TFTs

This dataset accompanies the manuscript "Thermionic rather than trap-assisted off-state conduction in back-end-of-line a-IGZO thin-film transistors: activation-energy evidence and the numerical validity floor of device simulation" (Microelectronics Journal). It contains the complete artefact set of a trap-resolved Sentaurus Device (W-2024.09-SP1) study of a dual-gate BEOL a-IGZO transistor: all 28 simulated transfer characteristics (143 bias points each) at 300, 350 and 400 K under three numerical probes (baseline mesh, 2.3× refined mesh, 100× tighter tolerance) and two arithmetic precisions (80-bit and 128-bit), together with the drain-field (V_DS = 1.2 V), ten-fold oxygen-vacancy-density, and shallow vacancy-level (E_C − 0.3 eV) test conditions. The deposit includes every Sentaurus input deck (structure, parameter file with per-value provenance, all run variants including the six minority-carrier solution attempts), the local IGZO material definition, the DF-ISE extraction script, and all figure sources. A dependency-free script, scripts/analyze.py, reproduces every quantitative value in the paper's Table 2 and Sections 4.2–4.5 directly from the raw CSV data with the single command: python3 scripts/analyze.py data. See README.md for the file manifest and regeneration instructions. Key results supported by this data: purely thermionic off-state conduction (activation energy on a single line, slope −0.836 eV/V, over sixteen decades of current); no trap-assisted-tunnelling signature under twelve-fold drain field, ten-fold vacancy density, or the DFT-favoured shallow vacancy level; and a measured numerical validity floor of double-precision drift–diffusion simulation (3×10⁻²⁴–5×10⁻²³ A/µm at 300–400 K), lowered twelve decades by 128-bit arithmetic.