Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays"

This dataset is supporting the following publication:
"Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" by Yasir J. Noori et al,
Applied Electronic Materials, 2021, 3, 8, 3610–3618.
https://doi.org/10.1021/acsaelm.1c00491.

The dataset contains excel files supporting the following:

Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6.
Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.