The growth at the wafer-scale h-BN was obtained in Deliverable 1.3. We then transferred SLG ontop of hBN films to test whether the hBN provided an enhancement in graphene's mobility. This milestone re

NIAID Data Ecosystem30

Achieving High Visibility of Monolayer MoS2 Using Backside-Illuminated Thin Films

纳米材料表征

二维材料器件

Interference reflection microscopy (IRM) and backside absorbing layer microscopy (BALM) have emerged as powerful optical microscopy methods for the study of nanomaterials and biological samples. These

Figshare2025-05-09 更新10

基于二维材料的逻辑与超快闪存芯片

二维材料器件

闪存器件性能测试

该数据集为基于二维材料的逻辑与超快闪存芯片数据集，具体包括了2个小方向：1）极性逻辑晶体管的制备、极性逻辑晶体管的结构表征、极性逻辑晶体管性能研究、厚度依赖特性研究、小尺寸逻辑稳定性、高温逻辑稳定性、高面积效率逻辑电路集成。2）非易失存储器的制备、材料表征、电学性能探究、制备多层闪存器件、进行结构的表征、进行电学测试。数据量为35.9MB。

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MoS2 based devices characteristics

二维材料器件

半导体电学特性测试

The MoS2 2D crystals based devices with six 1 μm wide fingers and back-gate electrode were fabricated on Si/SiO2 substrates by exfoliation and transfer from PDMS gel film. Electrodes, paths and pads w

DataCite Commons2025-03-14 更新30

Optically tuned terahertz modulator based on annealed multilayer MoS2

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