Exploiting the bending of GaAs nanowires due to optical excitation using Laser pump and X-ray probe measurement

The flexoelastic response of bent GaAs nanowires is planned to identify experimentally by measuring the change of the bending radius of single bent nanowires by a pump and probe experiment at beamline ID09 equipped with a fs laser. After the excitation of electrons the redistribution of charge carriers in the conduction band from the compressed to the expanded regions of the bent lattice will screen the radial electric field and will modify the radial strain gradient visible by a change of bending radius.