SARR SOT-MTJ sataset
收藏DataCite Commons2025-04-07 更新2025-04-16 收录
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https://ieee-dataport.org/documents/sarr-sot-mtj-sataset
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This dataset is relatived to the article named"Manufacturing-Friendly SOT-MTJ device with High Reliability and Switching Efficiency". In this paper, we propose a novel manufacturing-friendly self-aligned rounded rectangle (SARR) spin-orbit torque magnetic tunnel junction (SOT-MTJ) device, in which the rounded-rectangle shape MTJ pillar and SOT channel are defined by single etch process. Two via-type bottom electrodes (BEs) are located at both ends beneath the MTJ pillar, with their entire top surfaces covered by the MTJ pillar. This device architecture eliminates the need for precise etch-stop control and can fundamentally address the critical process window limitation that has plagued conventional SOT-MTJ fabrication.
提供机构:
IEEE DataPort
创建时间:
2025-04-07



