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SARR SOT-MTJ sataset

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DataCite Commons2025-04-07 更新2025-04-16 收录
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https://ieee-dataport.org/documents/sarr-sot-mtj-sataset
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This dataset is relatived to the article named"Manufacturing-Friendly SOT-MTJ device with High Reliability and Switching Efficiency". In this paper, we propose a novel manufacturing-friendly self-aligned rounded rectangle (SARR) spin-orbit torque magnetic tunnel junction (SOT-MTJ) device, in which the rounded-rectangle shape MTJ pillar and SOT channel are defined by single etch process. Two via-type bottom electrodes (BEs) are located at both ends beneath the MTJ pillar, with their entire top surfaces covered by the MTJ pillar. This device architecture eliminates the need for precise etch-stop control and can fundamentally address the critical process window limitation that has plagued conventional SOT-MTJ fabrication.

本数据集与题为《兼具高可靠性与开关效率的制造友好型自旋轨道矩磁隧道结(spin-orbit torque magnetic tunnel junction,SOT-MTJ)器件》的研究论文相关。在该论文中,我们提出了一种新型制造友好型自对准圆角矩形(self-aligned rounded rectangle,SARR)自旋轨道矩磁隧道结(SOT-MTJ)器件,该器件的圆角矩形MTJ柱体与自旋轨道矩通道仅通过单次刻蚀工艺即可完成图形定义。两个通孔型底部电极(bottom electrodes,BEs)位于MTJ柱体下方的两端,其整个顶面均被MTJ柱体覆盖。该器件架构无需进行精确的刻蚀终止控制,可从根本上解决长期困扰传统SOT-MTJ制备的关键工艺窗口限制问题。
提供机构:
IEEE DataPort
创建时间:
2025-04-07
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