Data and analysis files accompanying the paper: 'Engineered Ge profiles in Si/SiGe heterostructures for increased valley splitting'

The data sets are provided for the analysis of the raw data and subsequent creation of the figures presented in the manuscript 'Engineering' Ge profiles in Si/SiGe heterostructures for increased valley splitting. The data supports the characterisation of 2D transport measurements in Heterostructure field effect transistors. We probe valley splitting energy from quantum hall experiments and find a correlation between increased valley splitting and increased disorder.

本数据集可用于原始数据分析，以及制作发表于题为《面向提升谷分裂（valley splitting）的Si/SiGe异质结构锗剖面工程化设计》的学术论文中的全部图表。本数据集可支撑异质结场效应晶体管（Heterostructure Field Effect Transistor）的二维输运测量表征工作。本研究通过量子霍尔（quantum Hall）实验探测谷分裂能量，发现谷分裂的提升与无序度增强之间存在相关性。