Upsetting SRAM units with laser-driven nanosecond proton flash

Investigating the radiation effects on semiconductor chips is critical for assessing and ensuring the reliable operation of space-based electronic systems. We present the first proof-of-principle demonstration of radiation effects on Static Random-Access Memory (SRAM) chips utilizing high flux nanosecond proton beam driven by a femtosecond intense laser pulse. A quasi-monoenergetic proton beam centered at around 8 MeV with a pulse duration of 2.35 ns is delivered to the SRAM chips, achieving peak flux of 10¹⁷ ions/cm²/s. The observed SRAM upset cross-section approaching 10-13 cm²/bit, exhibiting a 2-3.5× enhancement compared to the ones tested on conventional accelerator. This result demonstrates capability of radiation tests of laser-driven ultrashort proton flashes and may lead to a new paradigm for ultrafast dynamics of silicon-based devices under extreme radiation conditions.