Processed Raman Spectrum of an Electrochemically Modified InP Surface for Compliant Buffer Applications

This dataset contains a single representative, processed Raman spectrum of an electrochemically modified indium phosphide (InP) surface engineered to function as a mechanically compliant buffer layer for advanced electronic and optoelectronic heterostructures. The Raman spectrum is provided as supporting spectroscopic evidence demonstrating the preservation of crystalline integrity of InP following controlled electrochemical surface modification that results in a microtextured, domain-segmented morphology. The presence, position, and linewidth of the characteristic transverse optical (TO) and longitudinal optical (LO) phonon modes of zinc-blende InP confirm that the electrochemical treatment does not induce amorphization, secondary phase formation, or significant residual strain in the near-surface region. Only the processed Raman spectrum is included in this dataset. Raw spectra and full electrochemical processing parameters are intentionally not disclosed at this stage, as the dataset is intended to document the final spectroscopic outcome relevant to the interpretation presented in the associated research study. The dataset may be extended in future versions to include additional spectra or raw data, if appropriate. This dataset supports research on compliant buffer layers, electrochemically modified III–V semiconductor surfaces, and strain-management strategies in heterostructure integration, and may be reused for comparative or methodological purposes. Methods Raman spectroscopy was employed to assess the structural quality and lattice integrity of the electrochemically modified InP surface. Measurements were performed at room temperature using a micro-Raman configuration in backscattering geometry. The recorded spectrum covers the spectral region containing the first-order phonon modes characteristic of crystalline InP. Data processing included baseline correction and normalization to remove background contributions and facilitate reliable identification of phonon features. Peak positions and full widths at half maximum (FWHM) of the TO and LO modes were extracted from the processed spectrum and used as qualitative indicators of crystallinity and strain neutrality. The spectrum included in this dataset represents a typical processed result used for interpretation in the associated study. Detailed instrumental settings and electrochemical modification parameters are intentionally omitted and may be disclosed in future dataset versions upon completion of the full experimental program. Content of the dataset The dataset includes: One processed Raman spectrum of an electrochemically modified InP surface; A table of extracted phonon parameters (peak position and FWHM) for the TO and LO modes; A sample identification table describing the material and surface state.