The objective of this proposal is to investigate the temperature dependence of charge density in microelectronic components under the action of pulsed X-ray as an alternative source that induces SEE.
Semiconductor industry is currently offering 7 nm technology node with FinFET fabrication processes. Soft error causing mechanisms and error rates for FinFET technologies are...
In addition to fast-neutron- and alpha particles, use of B10 in the fabrication process has resulted in high sensitivity to thermal neutrons for ICs fabricated at advanced...
