Atomic Layer Deposition Process Conditions for HfSiO and TiN Ultra-Thin Layers to fabricate the device structure.
收藏Figshare2016-08-30 更新2026-04-29 收录
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https://figshare.com/articles/dataset/Atomic_Layer_Deposition_Process_Conditions_for_HfSiO_and_TiN_Ultra-Thin_Layers_to_fabricate_the_device_structure_/3794676
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资源简介：
Atomic Layer Deposition Process Conditions for HfSiO and TiN Ultra-Thin Layers to fabricate the device structure.
创建时间：
2016-08-30
