Synaptic Behavior in Ferroelectric Epitaxial Rhombohedral Hf0.5Zr0.5O2 Thin Films
收藏Mendeley Data2024-03-27 更新2024-06-29 收录
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https://dataverse.nl/citation?persistentId=doi:10.34894/2PP3TR
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资源简介:
In this work, the switching mechanism of the rhombohedral phase of HZO films is characterized by a two-stage process. In addition, the synaptic behaviour of this phase is presented, comparing it with previous reports on orthorhombic or non-epitaxial films. Unexpected similarities have been found between these structurally distinct systems.
创建时间:
2023-06-28



