Lattice Strain Mapping in Radio-Frequency GaN Transistors

Despite urgent needs for efficient thermal solutions for next-generation radio-frequency (RF) devices for 5G/6G communications,
accurate spatial and temporal temperature characterizations of these devices are lacking, hindering efforts to develop effective thermal
solutions. During the proposed beamtime, we aim to further develop a novel, X-ray nano-diffraction-based thermal metrology technique to
accurately characterize internal temperatures of RF devices made of crystalline multi-layers with tens of nm spatial resolution. If successful, our work will deliver, for the first time, a high-resolution internal temperature map of RF devices in situ. Subsequently, we anticipate new innovations in thermal solutions in other nanoscale electronic devices.